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Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Zhuang, Qiandong and Li, J. M. and Zeng, Y. P. and Yoon, S. F. and Zheng, H. Q. and Kong, M.Y. and Lin, L. Y. (2000) Effect of rapid thermal annealing on InGaAs/GaAs quantum wells. Journal of Crystal Growth, 212 (1-2). pp. 352-355. ISSN 0022-0248

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Abstract

We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures.

Item Type: Article
Journal or Publication Title: Journal of Crystal Growth
Uncontrolled Keywords: Annealingnext term ; Interdiffusion ; previous termQuantumnext term dots ; MBE
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 51501
Deposited By: ep_importer_pure
Deposited On: 18 Nov 2011 12:01
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:23
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/51501

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