Liu, B. and Zhuang, Qiandong and Yoon, S. F. and Dai, J. H. and Kong, M.Y. and Zeng, Y. P. and Li, J. M. and Lin, L. Y. and Zhang, J. H. (2001) Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice. International Journal of Modern Physics B (IJMPB), 15 (13). pp. 1959-1968. ISSN 0217-9792Full text not available from this repository.
We investigated properties of intraband absorption in InxGa1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.
|Journal or Publication Title:||International Journal of Modern Physics B (IJMPB)|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||16 Nov 2011 16:46|
|Last Modified:||26 Jul 2012 19:52|
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