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Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice

Liu, B. and Zhuang, Qiandong and Yoon, S. F. and Dai, J. H. and Kong, M.Y. and Zeng, Y. P. and Li, J. M. and Lin, L. Y. and Zhang, J. H. (2001) Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice. International Journal of Modern Physics B, 15 (13). pp. 1959-1968. ISSN 0217-9792

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Abstract

We investigated properties of intraband absorption in InxGa1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.

Item Type: Article
Journal or Publication Title: International Journal of Modern Physics B
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 51493
Deposited By: ep_importer_pure
Deposited On: 16 Nov 2011 16:46
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 22:52
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/51493

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