Zhuang, Qiandong and Yoon, S. F. and Zheng, H. Q. (2001) Growth and emission tuning of InAs/InP quantum dots superlattice. JOURNAL OF CRYSTAL GROWTH, 227-22. pp. 1084-1088. ISSN 0022-0248
Full text not available from this repository.Abstract
We report the solid source molecular beam epitaxial growth of InAs/InP quantum dot (QD) superlattices and the effect of As/P exchange on the interface between InAs and InP. The InAs QDs were found to have an average lateral diameter of ∼40 nm and a density of 3–4×109 cm−2. The QDs superlattice has photoluminescence (PL) emission centred at 0.77 eV with a linewidth of 64 meV at low temperature (4 K). X-ray diffraction (XRD) spectra showed evidence of significant As/P exchange on the interface between InAs and InP during in situ annealing under P2 pressure before growing the spacer layer of InP. An average P composition of ∼30% in the resulting InAsP QDs in samples annealed for 50 s was deduced from dynamical simulations of the experimental XRD spectra. The QDs superlattice PL emission exhibits a blueshift following an increase in annealing time, and emission at 1.55 μm and at 300 K was achieved. This observation holds promise for possible telecommunication device applications at long wavelengths.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH |
| Uncontrolled Keywords: | Quantum dots; Superlattice; As/P exchange; PL emission |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 51491 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 16 Nov 2011 14:22 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 19:52 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/51491 |
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