Zhuang, Qiandong and Yoon, S. F. and Zheng, H. Q. (2001) Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice. Solid State Communications, 117 (8). pp. 465-469. ISSN 0038-1098Full text not available from this repository.
We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x1010cm-2. The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P2 pressure before growing the spacer layer. An average P composition of ~30% in the resulting InAsP QDs in samples annealed for 50s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55m at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength.
|Journal or Publication Title:||Solid State Communications|
|Uncontrolled Keywords:||B. Epitaxy; D. Optical properties; E. Luminescence|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||16 Nov 2011 12:48|
|Last Modified:||03 Nov 2015 15:15|
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