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Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

Zhuang, Qiandong and Yoon, S. F. and Zheng, H. Q. (2001) Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice. Solid State Communications, 117 (8). pp. 465-469. ISSN 0038-1098

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Abstract

We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x1010cm-2. The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P2 pressure before growing the spacer layer. An average P composition of ~30% in the resulting InAsP QDs in samples annealed for 50s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55m at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength.

Item Type: Article
Journal or Publication Title: Solid State Communications
Uncontrolled Keywords: B. Epitaxy; D. Optical properties; E. Luminescence
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 51488
Deposited By: ep_importer_pure
Deposited On: 16 Nov 2011 12:48
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:23
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/51488

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