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Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

Hayne, M and Usher, Alan and Harris, Jeffrey J and Moshchalkov, Victor V and Foxon, C Thomas (1998) Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Physical Review B, 57 (23). pp. 14813-14817. ISSN 1550-235X

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    Abstract

    We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Additional Information: © 1998 The American Physical Society
    Uncontrolled Keywords: 2-DIMENSIONAL ELECTRON-GAS ; MOBILITY ; GAAS ; ALXGA1-XAS ; HETEROSTRUCTURES
    Subjects:
    Departments: Faculty of Science and Technology > Physics
    ID Code: 50978
    Deposited By: ep_importer_pure
    Deposited On: 11 Nov 2011 09:40
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 19:45
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/50978

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