Hayne, M and Usher, Alan and Harris, Jeffrey J and Moshchalkov, Victor V and Foxon, C Thomas (1998) Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Physical Review B, 57 (23). pp. 14813-14817. ISSN 1550-235X
Abstract
We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.
| Item Type: | Article |
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| Journal or Publication Title: | Physical Review B |
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| Additional Information: | © 1998 The American Physical Society |
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| Uncontrolled Keywords: | 2-DIMENSIONAL ELECTRON-GAS ; MOBILITY ; GAAS ; ALXGA1-XAS ; HETEROSTRUCTURES |
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| Subjects: | UNSPECIFIED |
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| Departments: | Faculty of Science and Technology > Physics |
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| ID Code: | 50978 |
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| Deposited By: | ep_importer_pure |
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| Deposited On: | 11 Nov 2011 09:40 |
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| Refereed?: | Yes |
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| Published?: | Published |
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| Last Modified: | 26 Jul 2012 19:45 |
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| Identification Number: | |
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| URI: | http://eprints.lancs.ac.uk/id/eprint/50978 |
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