Cornet, Charles and Schliwa, Andrei and Hayne, M. and Chauvin, N. and Dore, Francois and Even, Jacky and Moshchalkov, Victor V. and Bimberg, Dieter and Bremond, G. and Bru-Chevallier, C. and Gendry, M. and Loualiche, Slimane (2006) InAs/InP quantum dots:from single to coupled dots applications. Physica Status Solidi C, 3 (11). pp. 4039-4042. ISSN 1610-1634Full text not available from this repository.
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Journal or Publication Title:||Physica Status Solidi C|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||12 Aug 2011 10:01|
|Last Modified:||18 Jun 2015 05:34|
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