Hayne, Manus and Maes, J and Manz, Y M and Schmidt, O G and Moshchalkov, V V (2004) Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2. Physica E: Low-dimensional Systems and Nanostructures, 21 (2-4). pp. 257-260. ISSN 1386-9477Full text not available from this repository.
We have studied the photoluminescence from GaInP2 grown by molecular beam epitaxy as a function of laser power, magnetic field and temperature. We show that the single luminescence peak observed in such samples arises from weakly bound (type-II) excitons in which the electrons are localised and the holes are free, and that it is the same as the additional low-energy peak typically observed in strongly CuPt-ordered GaInP2 grown by chemical vapour deposition techniques. We propose that the electron is confined in In-rich regions of the sample and the hole is delocalised by coupling between heavy-and light-hole bands. (C) 2003 Elsevier B.V. All rights reserved.
|Journal or Publication Title:||Physica E: Low-dimensional Systems and Nanostructures|
|Uncontrolled Keywords:||CuPt ordering ; GalnP(2) ; MBE ; pulsed magnetic fields ; COMPOSITION MODULATION ; SEMICONDUCTOR ALLOYS ; OPTICAL-PROPERTIES ; QUANTUM DOTS ; BAND ; ANISOTROPY ; MASSES|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||12 Aug 2011 09:00|
|Last Modified:||08 Dec 2016 02:30|
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