Maes, J and Hayne, M and Henini, M and Pulizzi, F and Patane, A and Eaves, L and Moshchalkov, V V (2004) Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots. Physica B: Condensed Matter, 346-34. pp. 428-431. ISSN 0921-4526Full text not available from this repository.
We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of the diamagnetic shift for a magnetic field perpendicular to the [0 0 1] direction reveals the onset of electron coupling between the dots in the stack. On reducing the interlayer distance to 3.1 nm, a lower exciton effective mass is seen in addition to the coupling. For such a close stacking, the strain field in and around the dot is completely different from that of a single-layered structure. In particular, the strain inside the InAs dots in the stack is partially relaxed, causing the observed effect. (C) 2004 Elsevier B.V. All rights reserved.
|Journal or Publication Title:||Physica B: Condensed Matter|
|Uncontrolled Keywords:||self-assembled quantum dots ; InAs ; pulsed magnetic fields ; GROWTH ; LAYERS|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||12 Aug 2011 09:28|
|Last Modified:||06 Dec 2016 03:05|
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