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Optically induced charging effects in self-assembled GaSb/GaAs quantum dots

Hayne, M and Razinkova, O and Bersier, S and Heitz, R and Muller-Kirsch, L and Geller, M and Bimberg, D and Moshchalkov, V V (2004) Optically induced charging effects in self-assembled GaSb/GaAs quantum dots. Physical Review B, 70 (8). ISSN 1550-235X

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    Abstract

    We report photoluminescence (PL) measurements on self-assembled GaSb/GaAs quantum dots. As the laser excitation is increased from very low levels, the PL shows a strong red shift, and then a blue shift, such that it presents a U-shaped curve. Raising the temperature causes a large (<100 meV) blue shift of the PL, and shifts the minimum of the PL energy versus laser excitation curve to higher laser powers. Applying a magnetic field at lasers powers much less than1 W cm(-2) red shifts the PL energy. We explain these effects by population or depopulation of dots that are filled in the dark with holes supplied by carbon acceptors.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Uncontrolled Keywords: CHEMICAL VAPOR-DEPOSITION ; EPITAXY ; HETEROSTRUCTURES ; LUMINESCENCE ; SPECTROSCOPY ; LOCALIZATION ; GASB
    Subjects:
    Departments: Faculty of Science and Technology > Physics
    ID Code: 49485
    Deposited By: ep_importer_pure
    Deposited On: 12 Aug 2011 09:41
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 19:28
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/49485

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