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Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots

Godefroo, S and Maes, J and Hayne, M and Moshchalkov, V V and Henini, M and Pulizzi, Fabio and Patane, A and Eaves, L (2004) Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots. Journal of Applied Physics, 96 (5). pp. 2535-2539. ISSN 1089-7550

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    Abstract

    We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 degreesC. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher. (C) 2004 American Institute of Physics.

    Item Type: Article
    Journal or Publication Title: Journal of Applied Physics
    Uncontrolled Keywords: MICROSCOPY ; LASERS
    Subjects: UNSPECIFIED
    Departments: Faculty of Science and Technology > Physics
    ID Code: 49484
    Deposited By: ep_importer_pure
    Deposited On: 12 Aug 2011 09:44
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 19:28
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/49484

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