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Electron wave-function spillover in self-assembled InAs/InP quantum wires

Maes, J and Hayne, M and Sidor, Y and Partoens, B and Peeters, F M and Gonzalez, Y and Gonzalez, L and Fuster, D and Garcia, Jorge M. and Moshchalkov, V V (2004) Electron wave-function spillover in self-assembled InAs/InP quantum wires. Physical Review B, 70 (15). ISSN 1550-235X

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    Abstract

    Charge confinement in InAs/InP self-assembled quantum wires is studied experimentally using photoluminescence in pulsed magnetic fields and theoretically using adiabatic theory within the effective-mass approximation, taking into account the strain in the samples. We show both experimentally and theoretically that, in spite of the large conduction band offset, the electron wave function is significantly spilled out of the wire in the wire height direction for thin wires. Furthermore, for a wire thickness of up to 8 monolayers, the electron spillover is inversely related to the wire height. These effects are due to the large zero point energy of the electron. As the wire becomes thicker, the decrease in confinement energy is reflected in a reduction of the electron wave-function extent.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Uncontrolled Keywords: OPTICAL-PROPERTIES ; DIAMAGNETIC SHIFT ; EPITAXIAL-GROWTH ; DOTS ; NANOSTRUCTURES ; EXCITONS ; MAGNETOPHOTOLUMINESCENCE ; CONFINEMENT ; ISLANDS ; WELLS
    Subjects:
    Departments: Faculty of Science and Technology > Physics
    ID Code: 49483
    Deposited By: ep_importer_pure
    Deposited On: 12 Aug 2011 09:55
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 19:28
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/49483

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