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Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells

Schildermans, Nele and Hayne, M and Moshchalkov, Victor V. and Rastelli, Armando and Schmidt, Oliver G. (2005) Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells. Physical Review B, 72 (11). ISSN 1550-235X

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    Abstract

    We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Uncontrolled Keywords: INPLANE EFFECTIVE-MASS ; ELECTRONIC-STRUCTURE ; MAGNETIC-FIELDS ; ENHANCEMENT ; HOLE ; EXCITONS ; WIRES
    Subjects: UNSPECIFIED
    Departments: Faculty of Science and Technology > Physics
    ID Code: 49482
    Deposited By: ep_importer_pure
    Deposited On: 12 Aug 2011 09:56
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 19:28
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/49482

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