Cornet, Charles and Hayne, Manus and Schliwa, Andrei and Dore, Francois and Even, Jacky and Bimberg, Dieter and Moshchalkov, Victor V. and Loualiche, Slimane (2007) InAs/InP quantum dots (QD) : From fundamental understanding to coupled QD 1.55 mu m laser applications. Physica Status Solidi C, 4 (2). pp. 458-461. ISSN 1610-1634Full text not available from this repository.
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Journal or Publication Title:||Physica Status Solidi C|
|Uncontrolled Keywords:||71.15.−m ; 71.70.Gm ; 73.21.La ; 78.55.Cr ; 78.67.Hc ; 85.35.Be|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||09 Aug 2011 09:06|
|Last Modified:||28 Apr 2017 02:33|
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