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Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field.

Sidor, Yosyp and Partoens, Bart and Peeters, Francois M. and Maes, Jochen and Hayne, M. and Fuster, Daniel and Gonzalez, Yolanda and Gonzalez, Luisa and Moshchalkov, Victor V. (2007) Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field. Physical Review B, 76 (195320). pp. 1-9.

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    Abstract

    The charge confinement in InAs/InP based quantum wells and self-assembled quantum wires is investigated theoretically and experimentally through the study of the exciton diamagnetic shift. The numerical calculations are performed within the single-band effective mass approximation, including band nonparabolicity and strain effects. The exciton diamagnetic shift is obtained for quantum wires and quantum wells incorporating local width fluctuations, as well as the electron-hole Coulomb interaction energy. Both electrons and holes (but to a lesser extent) show a substantial penetration into the InP barrier. A detailed comparison is made between the theoretical and experimental data on the magnetic field dependence of the exciton diamagnetic shift. Our theoretical analysis shows that excitons in the InAs/InP quantum well are trapped by local well width fluctuations.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Uncontrolled Keywords: diamagnetism ; effective mass ; excitons ; III-V semiconductors ; indium compounds ; photoluminescence ; self-assembly ; semiconductor quantum wells ; semiconductor quantum wires
    Subjects: UNSPECIFIED
    Departments: Faculty of Science and Technology > Physics
    ID Code: 49464
    Deposited By: ep_importer_pure
    Deposited On: 18 Aug 2011 14:49
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 18:15
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/49464

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