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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

Krier, A. and Sherstnev, V. V. and Labadi, Z. and Krier, S. E. and Gao, H. H. (2000) Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . Journal of Physics D-Applied Physics, 33 (24). pp. 3156-3160. ISSN 0022-3727

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Abstract

Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4480
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 15:55
Refereed?: Yes
Published?: Published
Last Modified: 10 Jun 2013 15:57
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4480

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