Krier, A. and Sherstnev, V. V. and Labadi, Z. and Krier, S. E. and Gao, H. H. (2000) Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . Journal of Physics D: Applied Physics, 33 (24). pp. 3156-3160. ISSN 0022-3727Full text not available from this repository.
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.
|Journal or Publication Title:||Journal of Physics D: Applied Physics|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||18 Mar 2008 15:55|
|Last Modified:||23 Oct 2016 01:50|
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