Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE PROCEEDINGS-OPTOELECTRONICS, 147 (3). pp. 222-224. ISSN 1350-2433Full text not available from this repository.
InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.
|Journal or Publication Title:||IEE PROCEEDINGS-OPTOELECTRONICS|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||18 Mar 2008 13:22|
|Last Modified:||26 Jul 2012 18:11|
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