Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE PROCEEDINGS-OPTOELECTRONICS, 147 (3). pp. 222-224. ISSN 1350-2433
Full text not available from this repository.Official URL: http://dx.doi.org/10.1049/ip-opt:20000620
Abstract
InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | IEE PROCEEDINGS-OPTOELECTRONICS |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 4475 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 18 Mar 2008 13:22 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 18:11 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/4475 |
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