Modelling of InAs thin layer growth from the liquid phase. .

Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE Proceedings - Optoelectronics, 147 (3). pp. 222-224. ISSN 1350-2433

Full text not available from this repository.

Abstract

InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.

Item Type:
Journal Article
Journal or Publication Title:
IEE Proceedings - Optoelectronics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? ATOMIC AND MOLECULAR PHYSICS, AND OPTICSCOMPUTER NETWORKS AND COMMUNICATIONSELECTRICAL AND ELECTRONIC ENGINEERINGQC PHYSICS ??
ID Code:
4475
Deposited By:
Deposited On:
18 Mar 2008 13:22
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Sep 2023 00:09