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Modelling of InAs thin layer growth from the liquid phase. .

Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE PROCEEDINGS-OPTOELECTRONICS, 147 (3). pp. 222-224. ISSN 1350-2433

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Abstract

InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.

Item Type: Article
Journal or Publication Title: IEE PROCEEDINGS-OPTOELECTRONICS
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4475
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 13:22
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4475

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