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Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Krier, A. and Krier, S. E. and Labadi, Z. (2000) Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A: Materials Science and Processing, 71 (3). pp. 249-253. ISSN 0947-8396

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Abstract

InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.

Item Type: Article
Journal or Publication Title: Applied Physics A: Materials Science and Processing
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4474
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 13:36
Refereed?: Yes
Published?: Published
Last Modified: 10 Jun 2013 15:57
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4474

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