Krier, A. and Krier, S. E. and Labadi, Z. (2000) Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A: Materials Science and Processing, 71 (3). pp. 249-253. ISSN 0947-8396
Full text not available from this repository.Official URL: http://dx.doi.org/10.1007/s003390000457
Abstract
InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Applied Physics A: Materials Science and Processing |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 4474 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 18 Mar 2008 13:36 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 18:11 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/4474 |
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