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Liquid phase epitaxial growth and morphology of InSb quantum dots. .

Krier, A. and Huang, X. L. and Hammiche, A. (2001) Liquid phase epitaxial growth and morphology of InSb quantum dots. . Journal of Physics D-Applied Physics, 34 (6). pp. 874-878. ISSN 0022-3727

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Abstract

In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs are observed on both these two substrates, the resulting structures being generally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 10(10) cm(-2), with dimensions of 5-15 nm in height and 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate contact time. The large QDs appear to be at a much lower density, being approximately 2 x 10(7) and 1 x 10(9) cm(-2) for growth on GaAs and InAs substrates, respectively. Furthermore, it was found that the difference in QD diameters becomes smaller as the lattice mismatch decreases.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4473
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 13:37
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4473

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