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Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

Krier, A. and Huang, X. L. (2002) Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. . Physica E: Low-dimensional Systems and Nanostructures, 15 (3). pp. 159-163. ISSN 1386-9477

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Abstract

Mid-infrared electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot (QD) light emitting diodes. The QDs were grown from the liquid phase at 590 degreesC on an InAS(100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, a broad emission band was observed, centred at similar to 4 mum, associated with transitions involving confined holes inside the InAsSb quantum dot. The QD emission band exhibits a blue shift with increasing injection current and the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The QD electroluminescence was observed to persist up to room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Item Type: Article
Journal or Publication Title: Physica E: Low-dimensional Systems and Nanostructures
Uncontrolled Keywords: Mid-infrared ; Quantum dots ; Electroluminescence
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4468
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 09:33
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4468

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