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Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

Gao, H. H. and Krier, A. and Sherstnev, V. V. (2000) Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. . Applied Physics Letters, 77 (6). pp. 872-874. ISSN 1077-3118

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    Abstract

    An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5-5 mu m mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III-V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an intermediate composition was introduced into the structure. In this way, we obtained room-temperature photodiodes with a cutoff wavelength near 5 mu m, a peak responsivity of 0.8 A/W, and a detectivity of 1.26 x 10(9) cm Hz(1/2)/W. These devices could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m, or as a replacement for PbSe photoconductors. (C) 2000 American Institute of Physics. [S0003-6951(00)02332-9].

    Item Type: Article
    Journal or Publication Title: Applied Physics Letters
    Additional Information: Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 77 (6), 2000 and may be found at http://link.aip.org/link/?APPLAB/77/872/1
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 4464
    Deposited By: Dr Susan E. Krier
    Deposited On: 18 Mar 2008 09:52
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 18:11
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/4464

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