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Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

Arivuoli, D. and Lawson, N. S. and Krier, A. and Attolini, G. and Pelosi, C. (2000) Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. . MATERIALS CHEMISTRY AND PHYSICS, 66 (2 - 3). pp. 207-212. ISSN 0254-0584

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Abstract

Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.

Item Type: Article
Journal or Publication Title: MATERIALS CHEMISTRY AND PHYSICS
Uncontrolled Keywords: Heterostructures ; Nanoindentation ; Mechanical properties
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4462
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 10:04
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4462

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