Monakhov, A. and Krier, A. and Sherstnev, V. V. (2004) The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . Semiconductor Science and Technology, 19 (3). pp. 480-484. ISSN 0268-1242
Full text not available from this repository.Abstract
It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Semiconductor Science and Technology |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 4451 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 14 Mar 2008 15:24 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 18:11 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/4451 |
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