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The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

Monakhov, A. and Krier, A. and Sherstnev, V. V. (2004) The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . Semiconductor Science and Technology, 19 (3). pp. 480-484. ISSN 0268-1242

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Abstract

It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.

Item Type: Article
Journal or Publication Title: Semiconductor Science and Technology
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4451
Deposited By: Dr Susan E. Krier
Deposited On: 14 Mar 2008 15:24
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4451

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