Monakhov, A. and Krier, A. and Sherstnev, V. V. (2004) The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . Semiconductor Science and Technology, 19 (3). pp. 480-484. ISSN 0268-1242Full text not available from this repository.
It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.
|Journal or Publication Title:||Semiconductor Science and Technology|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||14 Mar 2008 15:24|
|Last Modified:||19 Feb 2017 01:45|
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