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Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2004) Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . JOURNAL OF ELECTRONIC MATERIALS, 33 (8). pp. 867-872. ISSN 0361-5235

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Abstract

Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

Item Type: Article
Journal or Publication Title: JOURNAL OF ELECTRONIC MATERIALS
Uncontrolled Keywords: GaInAsSb - InAs substrates - liquid phase epitaxy (LPE) - photoluminescence (PL)
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4448
Deposited By: Dr Susan E. Krier
Deposited On: 14 Mar 2008 15:16
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4448

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