Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2004) Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . Journal of Electronic Materials, 33 (8). pp. 867-872. ISSN 0361-5235Full text not available from this repository.
Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.
|Journal or Publication Title:||Journal of Electronic Materials|
|Uncontrolled Keywords:||GaInAsSb - InAs substrates - liquid phase epitaxy (LPE) - photoluminescence (PL)|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||14 Mar 2008 15:16|
|Last Modified:||04 Nov 2015 02:34|
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