Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2004) Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . JOURNAL OF ELECTRONIC MATERIALS, 33 (8). pp. 867-872. ISSN 0361-5235
Full text not available from this repository.Abstract
Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | JOURNAL OF ELECTRONIC MATERIALS |
| Uncontrolled Keywords: | GaInAsSb - InAs substrates - liquid phase epitaxy (LPE) - photoluminescence (PL) |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 4448 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 14 Mar 2008 15:16 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 18:11 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/4448 |
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