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Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

Huang, X. L. and Labadi, Z. and Hammiche, A. and Krier, A. (2002) Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . Journal of Physics D-Applied Physics, 35 (23). pp. 3091-3095. ISSN 0022-3727

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Abstract

Self-assembled PbSe quantum-dots (QD) have been grown on GaSb(100) substrates from the liquid phase. A Pb-rich melt at 517degreesC was used with 10degreesC supercooling and with a short (10 Ins) melt-substrate contact time. Atomic force microscopy has revealed that the PbSe QDs are 4-10 nm in height and 10-40 nm in diameter, with an area density of 1.7 x 10(10) cm(-2). The growth of QDs occurs in the Volmer-Weber mode and is a result of the difference in lattice structures between the PbSe and GaSb rather than the lattice constants.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4433
Deposited By: Dr Susan E. Krier
Deposited On: 13 Mar 2008 10:00
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4433

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