Lancaster EPrints

The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

Choulis, S. A. and Andreev, A. and Merrick, M. and Jin, S. and Clarke, D. G. and Murdin, B. N. and Adams, A. R. and Krier, A. and Sherstnev, V. V. (2003) The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . Physica Status Solidi B, 235 (2). pp. 312-316. ISSN 0370-1972

Full text not available from this repository.

Abstract

The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.

Item Type: Article
Journal or Publication Title: Physica Status Solidi B
Uncontrolled Keywords: 42.55.Px • 42.60.Lh • 78.60.Fi
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4432
Deposited By: Dr Susan E. Krier
Deposited On: 13 Mar 2008 10:04
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:11
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4432

Actions (login required)

View Item