The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

Choulis, S. A. and Andreev, A. and Merrick, M. and Jin, S. and Clarke, D. G. and Murdin, B. N. and Adams, A. R. and Krier, A. and Sherstnev, V. V. (2003) The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . physica status solidi (b), 235 (2). pp. 312-316. ISSN 0370-1972

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Abstract

The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.

Item Type:
Journal Article
Journal or Publication Title:
physica status solidi (b)
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? 42.55.PX • 42.60.LH • 78.60.FIELECTRONIC, OPTICAL AND MAGNETIC MATERIALSCONDENSED MATTER PHYSICSQC PHYSICS ??
ID Code:
4432
Deposited By:
Deposited On:
13 Mar 2008 10:04
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Sep 2023 00:33