Lancaster EPrints

Mid-infrared whispering gallery mode ring lasers and LEDs. .

Wright, D. A. and Sherstnev, V. V. and Krier, A. and Monakhov, A. M. and Hill, G. (2003) Mid-infrared whispering gallery mode ring lasers and LEDs. . IEE PROCEEDINGS-OPTOELECTRONICS, 150 (4). pp. 314-317. ISSN 1350-2433

Full text not available from this repository.

Abstract

Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.

Item Type: Article
Journal or Publication Title: IEE PROCEEDINGS-OPTOELECTRONICS
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4424
Deposited By: Dr Susan E. Krier
Deposited On: 17 Mar 2008 15:49
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:10
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4424

Actions (login required)

View Item