Wright, D. A. and Sherstnev, V. V. and Krier, A. and Monakhov, A. M. and Hill, G. (2003) Mid-infrared whispering gallery mode ring lasers and LEDs. . IEE PROCEEDINGS-OPTOELECTRONICS, 150 (4). pp. 314-317. ISSN 1350-2433Full text not available from this repository.
Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.
|Journal or Publication Title:||IEE PROCEEDINGS-OPTOELECTRONICS|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||17 Mar 2008 15:49|
|Last Modified:||26 Jul 2012 18:10|
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