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Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

Liu, P. W. and Tsai, G. and Lin, H. H. and Krier, A. and Zhuang, Q. D. and Stone, M, M. (2006) Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . Applied Physics Letters, 89 (20). p. 201115. ISSN 1077-3118

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    Abstract

    Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ~0.12 in the quantum well the photoluminescence emission band covers the CO2 absorption peak making it suitable for use in sources for CO2 detection.

    Item Type: Article
    Journal or Publication Title: Applied Physics Letters
    Additional Information: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (20), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/201115/1
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 4410
    Deposited By: Dr Susan E. Krier
    Deposited On: 12 Mar 2008 13:32
    Refereed?: Yes
    Published?: Published
    Last Modified: 24 Jan 2014 05:19
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/4410

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