Krier, A. and Huang, X. L. (2006) Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . Journal of Physics D: Applied Physics, 39 (2). pp. 255-261. ISSN 0022-3727
Full text not available from this repository.Official URL: http://dx.doi.org/10.1088/0022-3727/39/2/004
Abstract
We report on an experimental investigation of the influence of different design parameters and their relative importance in the fabrication of uncooled InAs light emitting diodes. In addition, optimization of the key variables involved in the liquid phase growth of these devices, the careful consideration of carrier confinement, current spreading, re-absorption and optical extraction were also found to be essential in order to obtain maximum output.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Journal of Physics D: Applied Physics |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 4402 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 12 Mar 2008 11:20 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 18 Oct 2017 02:07 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/4402 |
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