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Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

Krier, A. and Huang, X. L. (2006) Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . Journal of Physics D-Applied Physics, 39 (2). pp. 255-261. ISSN 0022-3727

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Abstract

We report on an experimental investigation of the influence of different design parameters and their relative importance in the fabrication of uncooled InAs light emitting diodes. In addition, optimization of the key variables involved in the liquid phase growth of these devices, the careful consideration of carrier confinement, current spreading, re-absorption and optical extraction were also found to be essential in order to obtain maximum output.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 4402
Deposited By: Dr Susan E. Krier
Deposited On: 12 Mar 2008 11:20
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:10
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/4402

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