Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. and , EU Contract No. RII3-CT-2004-506239 (Funder) and , DFG Grant Nos. DR832/3-1 (Funder) and , DFG KO 3743/1-1 (Funder) and , AOBJ: 550341 (Funder) (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118
Full text not available from this repository.Abstract
We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Applied Physics Letters |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 40783 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 06 May 2011 14:14 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 18:04 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/40783 |
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