Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. and , EU Contract No. RII3-CT-2004-506239 (Funder) and , DFG Grant Nos. DR832/3-1 (Funder) and , DFG KO 3743/1-1 (Funder) and , AOBJ: 550341 (Funder) (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118Full text not available from this repository.
We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.
|Journal or Publication Title:||Applied Physics Letters|
|Subjects:||Q Science > Q Science (General)|
Q Science > QC Physics
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||06 May 2011 14:14|
|Last Modified:||04 Nov 2015 02:25|
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