Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. and EU Contract No. RII3-CT-2004-506239 (Funder) and DFG Grant Nos. DR832/3-1 (Funder) and DFG KO 3743/1-1 (Funder) and AOBJ: 550341 (Funder) (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118

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Abstract

We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? PHYSICS AND ASTRONOMY (MISCELLANEOUS)Q SCIENCE (GENERAL)QC PHYSICS ??
ID Code:
40783
Deposited By:
Deposited On:
06 May 2011 13:14
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Sep 2023 00:08