de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. and , EPSRC Studentship for MDLM (Funder) (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D-Applied Physics, 43 (34). p. 345103. ISSN 0022-3727
Full text not available from this repository.Abstract
We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Journal of Physics D-Applied Physics |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 40782 |
| Deposited By: | Dr Susan E. Krier |
| Deposited On: | 06 May 2011 14:12 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 18:04 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/40782 |
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