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Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. and , EPSRC Studentship for MDLM (Funder) (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D-Applied Physics, 43 (34). p. 345103. ISSN 0022-3727

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Abstract

We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 40782
Deposited By: Dr Susan E. Krier
Deposited On: 06 May 2011 14:12
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:19
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/40782

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