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Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43 (34). p. 345103. ISSN 0022-3727

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Abstract

We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.

Item Type: Article
Journal or Publication Title: Journal of Physics D: Applied Physics
Subjects: ?? q1 ??
?? qc ??
Departments: Faculty of Science and Technology > Physics
ID Code: 40782
Deposited By: Dr Susan E. Krier
Deposited On: 06 May 2011 14:12
Refereed?: Yes
Published?: Published
Last Modified: 23 Mar 2017 17:46
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/40782

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