de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43 (34). p. 345103. ISSN 0022-3727Full text not available from this repository.
We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.
|Journal or Publication Title:||Journal of Physics D: Applied Physics|
|Subjects:||?? q1 ??|
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|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Susan E. Krier|
|Deposited On:||06 May 2011 14:12|
|Last Modified:||23 Mar 2017 17:46|
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