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Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

Cheetham, K. J. and Krier, A. and Patel, I. I. and Martin, F. L. and Tzeng, J-S and Wu, C-J and Lin, H-H and , EPSRC Studentship for KJC (Funder) (2011) Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. Journal of Physics D-Applied Physics, 44 (8). 085405. ISSN 0022-3727

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The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

Item Type: Article
Journal or Publication Title: Journal of Physics D-Applied Physics
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
Faculty of Science and Technology > Lancaster Environment Centre
ID Code: 40781
Deposited By: Dr Susan E. Krier
Deposited On: 06 May 2011 14:04
Refereed?: Yes
Published?: Published
Last Modified: 01 Oct 2013 15:28
Identification Number:

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