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Asymmetry gap in the electronic band structure of bilayer graphene.

McCann, Edward (2006) Asymmetry gap in the electronic band structure of bilayer graphene. Physical Review B, 74 (16). p. 161403. ISSN 1550-235X

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    Abstract

    A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 30812
    Deposited By: Dr Edward McCann
    Deposited On: 07 Dec 2009 10:53
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 16:50
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/30812

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