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Influence of trigonal warping on interference effects in bilayer graphene

Kechedzhi, K. and Falko, Vladimir I. and McCann, E. and Altshuler, B. L. (2007) Influence of trigonal warping on interference effects in bilayer graphene. Physical review letters, 98 (17). ISSN 0031-9007

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    Abstract

    Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

    Item Type: Article
    Journal or Publication Title: Physical review letters
    Additional Information: © 2007 The American Physical Society
    Uncontrolled Keywords: FLUCTUATIONS ; MAGNETORESISTANCE ; ELECTRON-GAS ; WELLS ; LOW-TEMPERATURES ; CONDUCTION ; ANTILOCALIZATION ; INVERSION-LAYERS ; WEAK-LOCALIZATION ; FILMS
    Subjects:
    Departments: Faculty of Science and Technology > Physics
    ID Code: 30811
    Deposited By: Dr Edward McCann
    Deposited On: 07 Dec 2009 10:30
    Refereed?: Yes
    Published?: Published
    Last Modified: 17 Sep 2013 08:20
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/30811

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