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Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots

Falko, Vladimir I. and Altshuler, B. L. and Tsyplyatyev, O. (2005) Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots. Physical Review Letters, 95 (7). ISSN 1079-7114

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Abstract

Inelastic spin relaxation and spin splitting s in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, s demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B||[100] than for B||[110].

Item Type: Article
Journal or Publication Title: Physical Review Letters
Additional Information: Our prediction that inelastic spin relaxation and spin splitting in lateral GaAs/AlGaAs quantum dots have a nonlinear magnetic field dependence and pronounced anisotropy (with respect to the in-plane orientation of a magnetic field) resulted in a collaboration with Marcus at Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics
Uncontrolled Keywords: semiconductor quantum dots ; III-V semiconductors ; gallium arsenide ; g-factor ; spin-orbit interactions ; magnetoelectronics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 2362
Deposited By: ep_importer
Deposited On: 01 Apr 2008 16:35
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 16:12
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/2362

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