The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions.

Cheianov, Vadim V. and Altshuler, B. L. and Falko, Vladimir I. (2007) The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions. Science, 315 (5816). pp. 1252-1255. ISSN 0036-8075

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Abstract

The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.

Item Type:	Article
Journal or Publication Title:	Science
Additional Information:	Our prediction of focusing of electrons by a np junction in graphene (by tuning carrier density on the two sides of the junction to equal values) leading to a possibility to engineer electronic lenses and focused beam splitters stimulated development of gate-controlled junctions in graphene-based transistors at Stanford, MPI-Stuttgart, Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics
Subjects:	Q Science > QC Physics
Departments:	Faculty of Science and Technology > Physics
ID Code:	2344
Deposited By:	ep_importer
Deposited On:	02 Apr 2008 10:26
Refereed?:	Yes
Published?:	Published
Last Modified:	26 Jul 2012 16:09
Identification Number:
URI:	http://eprints.lancs.ac.uk/id/eprint/2344

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