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Electron localization by self-assembled GaSb/GaAs quantum dots.

Hayne, Manus and Bersier, Stefan and Maes, Jochen and Moshchalkov, Victor V and Schliwa, Andrei and Muller-Kirsch, Lutz and Kapteyn, Christian and Heitz, Robert and Bimberg, Dieter (2003) Electron localization by self-assembled GaSb/GaAs quantum dots. Applied Physics Letters, 82 (24). pp. 4355-4357. ISSN 1077-3118

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    We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes.

    Item Type: Journal Article
    Journal or Publication Title: Applied Physics Letters
    Additional Information: Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (24), 2003 and may be found at
    Subjects: ?? qc ??
    Departments: Faculty of Science and Technology > Physics
    ID Code: 2285
    Deposited By: ep_importer
    Deposited On: 04 Apr 2008 09:29
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 May 2018 00:04
    Identification Number:

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