Chilingarov, Alexandre (2006) DC bias circuit effects in CV measurements. In: 9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, 2006-10-162006-10-18, CERN, Geneva, Switzerland.
|Microsoft Powerpoint (Chilingarov_RD50CERN06.ppt) |
A DC bias circuit is a necessary part of CV measurement set-up. The effects of this circuit on the measured parameters are simulated and compared with experimental data. Reconstruction of the actual DUT characteristics is considered.
|Item Type:||Conference or Workshop Item (Speech)|
|Journal or Publication Title:||9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Alexandre Chilingarov|
|Deposited On:||19 Nov 2008 14:15|
|Last Modified:||27 Jul 2012 01:59|
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