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DC bias circuit effects in CV measurements.

Chilingarov, Alexandre (2006) DC bias circuit effects in CV measurements. In: 9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, 2006-10-162006-10-18, CERN, Geneva, Switzerland.

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    Abstract

    A DC bias circuit is a necessary part of CV measurement set-up. The effects of this circuit on the measured parameters are simulated and compared with experimental data. Reconstruction of the actual DUT characteristics is considered.

    Item Type: Conference or Workshop Item (Speech)
    Journal or Publication Title: 9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 19914
    Deposited By: Dr Alexandre Chilingarov
    Deposited On: 19 Nov 2008 14:15
    Refereed?: No
    Published?: Published
    Last Modified: 27 Jul 2012 01:59
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/19914

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