Luukka, P. and Brodbeck, T. J. and Campbell, Duncan and Chilingarov, Alexandre and Hughes, Gareth and Jones, B. K. and Sloan, Terry and et al., CERN-RD50 Collaboration (2004) Status of defect engineering activity of the RD50 collaboration. Nuclear Instruments and Methods A, 530 (1-2). pp. 152-157. ISSN 0168-9002Full text not available from this repository.
The objective of the CERN RD50 Collaboration is to improve the radiation tolerance of semiconductor sensors used in high-energy physics experiments. CERN Research Board approved the Collaboration in June 2002. It currently consists of 55 member institutes and about 280 scientists. Each collaborating institute is participating in at least one of the RD50's six research lines. These research lines cover a large variety of studies on radiation hardness and radiation effects, including defect modelling, defect characterization, defect engineering, characterization of macroscopic effects, new materials, and full-size semiconductor detectors. In this paper, we concentrate on the defect engineering activities of the RD50. The latest experimental results of the defect engineered radiation hard detectors are presented.
|Journal or Publication Title:||Nuclear Instruments and Methods A|
|Uncontrolled Keywords:||Si particle detectors ; Radiation hardness ; Material engineering|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Alexandre Chilingarov|
|Deposited On:||18 Nov 2008 09:00|
|Last Modified:||17 Sep 2013 08:17|
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