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Development of radiation tolerant semiconductor detectors for the Super-LHC.

Moll, M. and Brodbeck, T. J. and Campbell, Duncan and Chilingarov, Alexandre and Hughes, Gareth and Jones, B. K. and Sloan, Terry and et al., CERN-RD50 Collaboration (2005) Development of radiation tolerant semiconductor detectors for the Super-LHC. Nuclear Instruments and Methods A, 546 (1-2). pp. 99-107. ISSN 0168-9002

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The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 1035 cm−2 s−1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented.

Item Type: Article
Journal or Publication Title: Nuclear Instruments and Methods A
Uncontrolled Keywords: Radiation damage ; Semiconductor detectors ; Silicon particle detectors ; Defect engineering ; SLHC ; Super-LHC
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 19881
Deposited By: Dr Alexandre Chilingarov
Deposited On: 18 Nov 2008 09:19
Refereed?: Yes
Published?: Published
Last Modified: 17 Sep 2013 08:17
Identification Number:

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