Campbell, Duncan and Chilingarov, Alexandre and Sloan, Terry (2005) Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. Nuclear Instruments and Methods A, 552 (1-2). pp. 152-157. ISSN 0168-9002Full text not available from this repository.
Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.
|Journal or Publication Title:||Nuclear Instruments and Methods A|
|Uncontrolled Keywords:||Irradiated silicon detectors ; CV characteristics ; Depletion voltage ; Frequency dependence|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited By:||Dr Alexandre Chilingarov|
|Deposited On:||17 Nov 2008 13:27|
|Last Modified:||17 Sep 2013 08:17|
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