Campbell, Duncan and Chilingarov, Alexandre and Sloan, Terry (2005) Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. Nuclear Instruments and Methods A, 552 (1-2). pp. 152-157. ISSN 0168-9002
Full text not available from this repository.Official URL: http://dx.doi.org/10.1016/j.nima.2005.06.024
Abstract
Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Nuclear Instruments and Methods A |
| Uncontrolled Keywords: | Irradiated silicon detectors ; CV characteristics ; Depletion voltage ; Frequency dependence |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 19866 |
| Deposited By: | Dr Alexandre Chilingarov |
| Deposited On: | 17 Nov 2008 13:27 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 15:35 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/19866 |
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