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Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes.

Campbell, Duncan and Chilingarov, Alexandre and Sloan, Terry (2005) Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 552 (1-2). pp. 152-157. ISSN 0168-9002

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Abstract

Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.

Item Type: Article
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Uncontrolled Keywords: Irradiated silicon detectors ; CV characteristics ; Depletion voltage ; Frequency dependence
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 19866
Deposited By: Dr Alexandre Chilingarov
Deposited On: 17 Nov 2008 13:27
Refereed?: Yes
Published?: Published
Last Modified: 30 May 2014 11:58
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/19866

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