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Numerical investigation of quantum wires in bevel-etched heterostructures.

Giavaras, G. and Jefferson, J. H. and Fearn, M. and Kyriakou, Ian and Ashley, T. and Lambert, Colin J. (2007) Numerical investigation of quantum wires in bevel-etched heterostructures. Semiconductor Science and Technology, 22 (9). pp. 1025-1032. ISSN 0268-1242

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Abstract

We present and study a method to form quantum wires within a bevel-etched semiconductor heterostructure in which n-type quantum wires may be formed either next to a hole-charged region or a depleted quantum well region. By employing Schrödinger and Poisson solutions we examine the formation of the confining potential giving rise to a wire and its dependence on layer structure and magnitude of bevel angle. We also demonstrate how the basic idea can be extended to double well heterostructures in order to form additional quantum wires which can be induced in a lateral configuration. Possible advantages of the proposed method and the resulting quantum wires are discussed.

Item Type: Article
Journal or Publication Title: Semiconductor Science and Technology
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 18687
Deposited By: ep_ss_importer
Deposited On: 28 Oct 2008 15:12
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 20:22
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/18687

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