Tahini, H. A. and Chroneos, A. and Murphy, S. T. and Schwingenschloegl, U. and Grimes, R. W. (2013) Vacancies and defect levels in III-V semiconductors. Journal of Applied Physics, 114 (6). ISSN 0021-8979
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Official URL: https://doi.org/10.1063/1.4818484
Abstract
Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3
Item Type:
Journal Article
Journal or Publication Title:
Journal of Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
?? GENERALIZED GRADIENT APPROXIMATIONAB-INITIOELECTRONIC-STRUCTUREGALLIUM-ARSENIDESELF-DIFFUSIONCOMPOUND SEMICONDUCTORSGAASANTIMONIDEIDENTIFICATIONPHOSPHIDEPHYSICS AND ASTRONOMY(ALL) ??
Departments:
ID Code:
125441
Deposited By:
Deposited On:
24 May 2018 12:18
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Sep 2023 01:12