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Weak localization in monolayer and bilayer graphene.

Kechedzhi, K. and McCann, Edward and Falko, Vladimir and Suzuura, H. and Ando, T. and Altshuler, B. L. (2007) Weak localization in monolayer and bilayer graphene. European Physical Journal Special Topics, 148 (1). pp. 39-54. ISSN 1951-6355

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Abstract

We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.

Item Type: Article
Journal or Publication Title: European Physical Journal Special Topics
Additional Information: The original publication is available at www.springerlink.com
Uncontrolled Keywords: ELECTRONIC-PROPERTIES ; BERRYS PHASE ; MAGNETORESISTANCE ; CARBON NANOTUBES ; LOW-TEMPERATURES ; INTERCALATION COMPOUNDS ; GAS ; ANTILOCALIZATION ; INVERSION-LAYERS ; GRAPHITE
Subjects: UNSPECIFIED
Departments: Faculty of Science and Technology > Physics
ID Code: 11376
Deposited By: Dr Edward McCann
Deposited On: 14 Aug 2008 09:51
Refereed?: Yes
Published?: Published
Last Modified: 06 Sep 2013 17:33
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/11376

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